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RTQ045N03
Transistors
2.5V Drive Nch MOS FET
RTQ045N03
Structure
Silicon N-channel
MOS FET
External dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
1.0MAX
0.85
0.7
Features
1) Low on-resistance.
(6)
(5)
(4)
0~0.1
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
1pin mark
(1)
(2)
0.4
(3)
0.16
Each lead has same dimensions
Abbreviated symbol : QM
Application
Power switching, DC / DC converter.
Packaging specifications
Equivalent circuit
Package
Taping
(6)
(5)
(4)
(6)
(5)
(4)
Type
Code
TR
RTQ045N03
Basic ordering unit (pieces)
3000
? 2
? 1
(1)
(2)
(3)
(1) Drain
Absolute maximum ratings (Ta=25 ° C)
(1)
(2)
(3)
(2) Drain
(3) Gate
(4) Source
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
12
Unit
V
V
(5) Drain
(6) Drain
? A protection diode is included between the gate and
the source terminals to protect the diode against static
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 4.5
± 18
1.0
4.0
1.25
A
A
A
A
W
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Channel temperature
Storage temperature
Tch
Tstg
150
? 55~+150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
100
Unit
° C / W
? Mounted on a ceramic board.
Rev.C
1/3
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